| PART |
Description |
Maker |
| AM29F200B AM29F200BT-120SC |
2 Mbit (256 K x 8-Bit/128 K x 16-Bit)
EEPROM,FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| AMD29F010B AM29F010B AMD29F010B-120EC AMD29F010B-1 |
From old datasheet system
1 Mbit (128 K x 8-Bit)
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| AM42DL16X2D |
16 Mbit (2 M x 8-Bit/1 M x 16-Bit) CMOS and 2 Mbit (128 K x 16-Bit) Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| M58LR128KB855 M58LR128KB M58LR128KT M58LR128KT855 |
128 or 256 Mbit (隆驴16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| S29GL256N |
512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
|
Cypress Semiconductor
|
| M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| AM29F200BB-45EC AM29F200BB-45ED AM29F200BB-45EF AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
|
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